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A comprehensive study on properties of Semiconductors and p-n Junction

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Erschienen am 13.08.2014
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Bibliografische Daten
ISBN/EAN: 9783656719052
Sprache: Englisch
Umfang: 8 S., 0.73 MB
Auflage: 1. Auflage 2014
E-Book
Format: PDF
DRM: Nicht vorhanden

Beschreibung

Scientific Essay from the year 2012 in the subject Physics - Electrodynamics, , language: English, abstract: A comprehensive study of p-n junction is necessary to design an electronic device as well as circuits. An electronic device controls the movement of electrons. The study of electronic devices requires a basic understanding of the relationship between electrons and other components of an atom. This leads to knowledge of the differences between conductors, insulators and semiconductors and to an understanding of p-type and n-type semiconductor material. p-n junction is formed by joining p-type and n-type semiconductor materials. So the concept of semiconductor, majority and minority carrier of p-type and n-type semiconductor, doping, depletion region of p-n junction, mobility and conductivity, drift and diffusion current, carrier concentration calculation and Fermi energy level is actually the comprehensive study of p-n junction.

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