This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.

InhaltsangabePreface / Frequently Used Symbols / Explanation of Frequently Used Abbreviations Fundamental Concepts Silicon and Its Imperfections; The Electron System; Phenomenological and Atomistic Approaches to Diffusion; Thermodynamics; Reaction Kinetics; Exchange of Matter Between Phases; Bibliography Intrinsic Point Defects Concentration in Thermal Equilibrium; Diffusion of Intrinsic Point Defects; Self-Diffusion and Tracer Diffusion; Vacancies; Self-Interstitials; Frenkel Pairs; Bulk Recombination and Bulk Processes; Surface Recombination and Surface Processes; Initial Conditions; Bibliography Impurity Diffusion in Silicon Basic Mechanisms; Impurity-Point-Defect Pairs; Diffusion of Substitutional Impurities via Mobile Complexes with Intrinsic Point Defects; Pair-Diffusion Models; Frank-Turnbull Mechanism; Kick-Out Mechanism; Bibliography Isovalent Impurities Carbon; Germanium; Tin; Bibliography Dopants Dopant Clusters; Ion Pairing; Boron; Aluminum; Gallium; Indium; Nitrogen; Phosphorus; Arsenic; Antimony; Bibliography Chalcogens Oxygen; Sulfur; Selenium; Tellurium; Bibliography Halogens Fluorine; Chlorine; Bromine; Bibliography List of Tables / List of Figures / Index